| 摘要 |
<p>The present invention provides semiconductor devices having at least one silicon region in a silicon carbide wafer in which is fabricated a low voltage semiconductor device and on the same chip, at least one silicon carbide region in which is fabricated a high voltage (i.e., ⊃1000V) semiconductor device it comprises the steps of: producing a region of amorphous silicon carbide on a monocrystalline silicon carbide substrate; removing at least an effective amount of carbon from said amorphized region, preferably by subjecting at least a portion of the amorphous silicon carbide region to an etchant material which selectively removes carbon to produce a region of amorphous silicon on a monocrystalline silicon carbide substrate; and subjecting the monocrystalline substrate with at least a region of amorphous silicon to high temperature thermal anneal to produce a region of monocrystalline silicon on said monocrystalline silicon carbide substrate.</p> |
