Semiconductor device and its manufacturing method capable of reducing low frequency noise

摘要

In a semiconductor device, a first semiconductor layer (2) is formed on a semiconductor substrate (1). A second semiconductor layer (3) is formed on a part of the first semiconductor layer, and a third semiconductor layer (4) is formed on a part of the second semiconductor layer. A first electrode (5) is formed on the third semiconductor layer, and a second electrode (6) is formed on the first semiconductor layer in contact with the second semiconductor layer and apart from the semiconductor layer, thus forming a diode. <IMAGE>