发明名称 Via capacitor
摘要 <p>A capacitor includes a first conductive layer disposed outwardly from a semiconductor substrate and comprising a first plate and a second plate. The capacitor also includes a first via layer disposed outwardly from the first conductive layer and comprising a first via coupled to the first plate and a second via coupled to the second plate. The first and second vias are separated by a dielectric and are operable to be charged with different potentials to establish a capacitance between the first and second vias. The capacitor further includes a second conductive layer disposed outwardly from the first via layer and comprising a third plate coupled to the first via and a fourth plate coupled to the second via. <IMAGE></p>
申请公布号 EP1109227(A2) 申请公布日期 2001.06.20
申请号 EP20000311259 申请日期 2000.12.15
申请人 TEXAS INSTRUMENTS INCORPORATED 发明人 HAROUN, BAHER S.;EVANS, BRIAN L.
分类号 H01G4/33;H01L21/02;H01L21/768;H01L23/522;H01L27/02;(IPC1-7):H01L29/92 主分类号 H01G4/33
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