发明名称 |
Method for the formation of semiconductor layer |
摘要 |
<p>A method for the formation of a semiconductor layer by which a defect density of structural defects, particularly a dislocation density of threading dislocations in the resulting semiconductor layer can be remarkably reduced, so that hours of work can be shortened as well as a manufacturing cost can be reduced without requiring any complicated process comprises supplying a structural defect suppressing material for suppressing structural defects in the semiconductor layer onto a surface of the layer of a material from which the semiconductor layer is to be formed. <IMAGE> <IMAGE> <IMAGE> <IMAGE></p> |
申请公布号 |
EP1109208(A2) |
申请公布日期 |
2001.06.20 |
申请号 |
EP20000127381 |
申请日期 |
2000.12.13 |
申请人 |
RIKEN |
发明人 |
TANAKA, SATORU;TAKEUCHI, MISAICHI;AOYAGI, YOSHINOBU |
分类号 |
H01L21/205;C30B25/02;H01L21/20;H01L21/203;H01L33/12;H01L33/16;H01L33/32;H01L33/34;H01S5/323;H01S5/343;(IPC1-7):H01L21/20;C30B25/18 |
主分类号 |
H01L21/205 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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