Method for fabricating a semiconductor structure having a stable crystalline interface with silicon

摘要

A method for fabricating a semiconductor structure comprises the steps of providing a silicon substrate (10) having a surface (12); forming on the surface of the silicon substrate an interface (14) characterised by a single atomic layer of silicon, nitrogen, and a metal; and forming one or more layers of a single crystal oxide (26) on the interface. The interface comprises an atomic layer of silicon, nitrogen, and a metal in the form MSiN2, where M is a metal. In a second embodiment, the interface comprises an atomic layer of silicon, a metal, and a mixture of nitrogen and oxygen in the form MSiÄN1-xOxÜ2, where M is a metal and X is 0≤X<1.