SEMICONDUCTOR OPTICAL ELEMENT AND ITS MANUFACTURING PROCESS; SEMICONDUCTOR OPTICAL ELEMENT BASED ON GROUP II OXIDE ELEMENT AND ITS MANUFACTURING PROCESS

摘要

light-emitting, lasing, and color-display elements. SUBSTANCE: thin film of ZnO is produced on sapphire substrate surface due to using laser molecular-beam epitaxy method. Semiconductor optical element based on group II element oxide uses thin film of zinc oxide incorporating magnesium or cadmium in solid solution condition. Adding magnesium or cadmium provides for varying forbidden gap width between 3 and 4 eV. EFFECT: reduced lasing threshold, wavelength of emitted light, and loss. 8 cl, 32 dwg, 1 tbl