Semiconductor memory device having a hydrogen barrier layer, and method for manufacturing the same,申请号EP19990120841-传众专利搜索

发明名称	Semiconductor memory device having a hydrogen barrier layer, and method for manufacturing the same
摘要
申请公布号	EP1006580(A3)	申请公布日期	2001.06.20
申请号	EP19990120841	申请日期	1999.10.25
申请人	MATSUSHITA ELECTRONICS CORPORATION	发明人	NAGANO, YOSHIHISA;TANAKA, KEISUKE;NASU, TORU
分类号	H01L27/10;H01L21/02;H01L21/768;H01L21/8246;H01L27/115;(IPC1-7):H01L27/115;H01L21/824	主分类号	H01L27/10
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