| 摘要 |
<p>A monolithic, multijunction photovoltaic cell (10; 30; 50; 80) is proposed, comprising: an active substrate subcell (11; 31; 51; 81) comprising one of Si, SiGe and pure Ge, said substrate subcell (11; 31; 51; 81) having a side and being characterized by a substrate subcell bandgap and a substrate subcell lattice constant; at least one subcell (17-14; 34-37; 57-54, 64-67; 86-83, 93-96) disposed adjacent said side, said subcell (17-14; 34-37; 57-54, 64-67; 86-83, 93-96) being characterized by a subcell lattice constant that is different than said substrate subcell lattice constant; and a transition layer (18; 38; 58, 68) intermediate said side and said subcell (17-14; 34-37; 57-54, 64-67; 86-83, 93-96). <IMAGE></p> |
