| 发明名称 |
Semiconductor device and fabrication method thereof |
| 摘要 |
A hard mask insulating layer is formed on a gate electrode which is formed on a main surface of a silicon substrate with a gate insulating layer interposed. An SiN sidewall spacer is directly formed on a thin SiO2 layer which is formed to cover a side surface of the gate electrode. A contact hole is formed to penetrate an interlayer insulating layer formed on an SiN stopper layer and reach the main surface of the silicon substrate.
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| 申请公布号 |
US6249015(B1) |
申请公布日期 |
2001.06.19 |
| 申请号 |
US19980115514 |
申请日期 |
1998.07.15 |
| 申请人 |
MITSUBISHI DENKI KABUSHIKI KAISHA;RYODEN SEMICONDUCTOR SYSTEM ENGINEERING CORPORATION |
发明人 |
MATSUO HIROSHI;YOKOYAMA YUICHI;ODA TAKUJI;MAEDA KIYOSHI;INOUE SHINYA;YAMAMOTO YUJI |
| 分类号 |
H01L23/522;H01L21/60;H01L21/768;H01L21/8242;H01L21/8244;H01L23/485;H01L27/108;H01L27/11;(IPC1-7):H01L27/108;H01L29/76;H01L29/94;H01L31/119 |
主分类号 |
H01L23/522 |
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