发明名称 |
Method of fabricating shallow trench isolation structure |
摘要 |
A method of fabricating a shallow trench isolation structure is described. A preserve layer is formed on a substrate. A trench is formed in the substrate and the preserve layer. An oxide layer is formed over the substrate to fill the trench. A wet densification step is performed in a moist environment. A planarization step is performed until the preserve layer is exposed. A shallow trench isolation structure is formed.
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申请公布号 |
US6248644(B1) |
申请公布日期 |
2001.06.19 |
申请号 |
US19990301210 |
申请日期 |
1999.04.28 |
申请人 |
UNITED MICROELECTRONICS CORP. |
发明人 |
YANG GWO-SHII;SHIH HSUEH-HAO;LIU CHIH-CHIEN;YEW TRI-RUNG |
分类号 |
H01L21/762;(IPC1-7):H01L21/76 |
主分类号 |
H01L21/762 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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