发明名称 Method of fabricating shallow trench isolation structure
摘要 A method of fabricating a shallow trench isolation structure is described. A preserve layer is formed on a substrate. A trench is formed in the substrate and the preserve layer. An oxide layer is formed over the substrate to fill the trench. A wet densification step is performed in a moist environment. A planarization step is performed until the preserve layer is exposed. A shallow trench isolation structure is formed.
申请公布号 US6248644(B1) 申请公布日期 2001.06.19
申请号 US19990301210 申请日期 1999.04.28
申请人 UNITED MICROELECTRONICS CORP. 发明人 YANG GWO-SHII;SHIH HSUEH-HAO;LIU CHIH-CHIEN;YEW TRI-RUNG
分类号 H01L21/762;(IPC1-7):H01L21/76 主分类号 H01L21/762
代理机构 代理人
主权项
地址