发明名称 |
Low cost method of fabricating transient voltage suppressor semiconductor devices or the like |
摘要 |
Transient voltage suppressor semiconductor devices and other semiconductor devices having rigorous requirements for the diffusion and depth of impurities to produce P-N junctions can be fabricated at surprisingly low costs without sacrifice of functional characteristics by subjecting the substrate to a grinding process resulting in a surface short of polishing perfection, thereby to eliminate the time-consuming and hence costly conventional polishing operation, and then diffusing the desired impurity into the substrate from a solid impurity source.
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申请公布号 |
US6248651(B1) |
申请公布日期 |
2001.06.19 |
申请号 |
US19980103731 |
申请日期 |
1998.06.24 |
申请人 |
GENERAL SEMICONDUCTOR, INC. |
发明人 |
ENG JACK;CHAN JOSEPH;ZAKALUK GREGORY;AMATO JOHN;GARBIS DENNIS |
分类号 |
H01L21/225;H01L21/304;(IPC1-7):H01L21/225;H01L21/302 |
主分类号 |
H01L21/225 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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