发明名称 Method of manufacturing semiconductor chips for display
摘要 In a method of manufacturing semiconductor chips for display, a semiconductor thin film is first formed on an insulating substrate, and then a series of processes including a heat-treatment process for the semiconductor thin film are carried out to form integrated thin film transistors on a sectioned area for one chip. Thereafter, pixel electrodes for one picture (frame) are formed within the sectioned area. During the series of processes, a laser pulse is irradiated onto the sectioned area by one shot to perform a heat treatment on the semiconductor thin film for one chip collectively and simultaneously (i.e., perform a batch heat treatment on the semiconductor thin film). Through the batch heat treatment, the crystallization of the semiconductor thin film is promoted. In addition, after the semiconductor thin film is doped with impurities, the activation of impurities doped in the semiconductor thin film can be performed by the batch heat treatment.
申请公布号 US6248606(B1) 申请公布日期 2001.06.19
申请号 US19980219137 申请日期 1998.12.22
申请人 SONY CORPORATION 发明人 INO MASUMITSU;HAYASHI HISAO;KUNII MASAFUMI;URAZONO TAKENOBU;NISHIHARA SHIZUO;MINEGISHI MASAHIRO
分类号 G02F1/136;G02F1/1362;G02F1/1368;H01L21/02;H01L21/20;H01L21/265;H01L21/268;H01L21/336;H01L27/12;H01L29/78;H01L29/786;(IPC1-7):H01L21/20 主分类号 G02F1/136
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