发明名称 ITO SPUTTERING TARGET
摘要 PROBLEM TO BE SOLVED: To provide an ITO(indium tin oxide) sputtering target capable of improving product yield by inhibiting the occurrence of nodules in an erosion region and simultaneously preventing the peeling of sticking matter adhering to a non-erosion region on an ITO target during sputtering. SOLUTION: In the ITO sputtering target consisting essentially of indium, tin and oxygen, the surface roughness (Ra) at the surface to be sputtered of the target is regulated to <=0.1μm and also the brittle fracture region per unit area is regulated to <=10%.
申请公布号 JP2001164358(A) 申请公布日期 2001.06.19
申请号 JP19990351555 申请日期 1999.12.10
申请人 TOSOH CORP 发明人 UCHIUMI KENTARO;NAGASAKI YUICHI;KUROSAWA SATOSHI
分类号 C23C14/34;(IPC1-7):C23C14/34 主分类号 C23C14/34
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