| 摘要 |
PROBLEM TO BE SOLVED: To provide a CMP device that can ensure an improvement in productivity and a reduction in the cost of polishing a product wafer by virtue of no needs to use a dummy wafer. SOLUTION: The CMP device 10 comprising a polishing plate 102 having an abrasive pad 101 stretched over the surface, a top ring 103 as a wafer holding mechanism for holding a semiconductor wafer, and a nozzle (piping) 107 for supplying slurry or pure water to the surface of the abrasive pad 101, is equipped with an infrared heater 11 for irradiation-heating the surface of the abrasive pad 101 and a band type heater 12 as heating means positioned along the periphery of the nozzle (piping) 107. The infrared heater 11 sets or maintains the surface temperature of the abrasive pad 102 at 28 deg.C proper for the polishing. The band type heater 12 prevents a fluctuation in the surface temperature of the abrasive pad 102 even while slurry or pure water drops to the surface of the abrasive pad 102. |
