Method and apparatus for passive optical characterization of semiconductor substrates subjected to high energy (MEV) ion implantation using high-injection surface photovoltage

摘要

A semiconductor testing device is used for testing a semiconductor device which has at least one spherical connection terminal. The testing device includes an insulating substrate having an opening formed therein at a position corresponding to the position of the spherical connection terminal, and a contact member, formed on the insulating substrate, including a connection portion which is connected with the spherical connection terminal, at least the connection portion being deformable and extending into the opening.