| 摘要 |
A gate electrode, silicon nitride film, silicon oxide film and silicon film are formed on an insulating substrate. A silicon oxide film and silicon nitride film are formed on the silicon film, and first and second contact holes are formed which penetrate these films. An electrode in contact with a drain area is arranged via the first contact hole. The whole is covered with a plagiarizing film, a third contact hole of smaller diameter than that of the second contact hole is formed corresponding to the second contact hole embedded by the planarizing film, and a transparent electrode in direct contact with a source area is arranged via the third contact hole. In this way, the contact resistance between the transparent electrode and the source area is reduced, and a simplified construction display device is obtained wherein the contact reliability of both electrodes is improved.
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