| 摘要 |
A novel method for forming contact holes is disclosed. According to the present invention, a silicon substrate is prevented from being over-etched by performing a two-step etching process. The first step is to etch a thick interlayer insulating layer until a thin etch stopper layer, formed beneath the interlayer insulating layer, is exposed. The second step is to over-etch the thin etch stopper layer. With this method, a lower capacitor electrode or a bit line can be prevented from being short-circuited with a well region of the silicon substrate, thereby reducing leakage currents.
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