| 摘要 |
PURPOSE: A method for fabricating a semiconductor device is provided to improve reliability by blocking up a moisture absorption path to a fuse box area. CONSTITUTION: In the method, the first interlayer dielectric layer(32), a fuse line(33) and at least one insulating layer(34,35) are formed in sequence on a semiconductor substrate(31) having a cell region and a periphery region. Next, at least one interconnection line(36,39) is formed on the insulating layer(34,35) in the cell region, and then a passivation layer(41) is formed thereon. Thereafter, the fuse box area and a bonding pad area in the periphery region are exposed, and then a stress buffer layer(43) is formed on the cell region and the fuse box area. The stress buffer layer(43) is made of a low hygroscopic material such as photosensitive polyimide capable of preventing moisture absorption.
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