| 摘要 |
PURPOSE: A method for forming a contact of a semiconductor device is provided to allow a reduction in contact resistance. CONSTITUTION: In the method, the first insulating layer(22) is formed on a semiconductor substrate(21), and the second insulating layer(23) is formed on the first insulating layer(22). Here the second insulating layer(23) has a lower wet-etch rate than the first insulating layer(22) has. Next, the second and first insulating layers(23,22) are selectively removed to form a contact hole, and then the first insulating layer(22) is selectively removed again by wet-etch to enlarge a lower part of the contact hole. Next, a barrier layer(25) is formed on entire surfaces including a surface of the contact hole, and a conductive plug(26) is then formed on the barrier layer(25) in the contact hole.
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