METHOD FOR PREVENTING DAMAGE OF OUTERMOST CELL IN FABRICATION OF FERROELECTRIC CAPACITOR

摘要

PURPOSE: A method for preventing a damage of an outermost cell in a cell array region during a fabrication of a ferroelectric capacitor is provided. CONSTITUTION: The method is characterized by forming a dummy pattern(112b) in a periphery region(P) contiguous to the cell array region(C) while a lower electrode(112a) of the capacitor is formed in the cell array region(C). In the method, appropriate layers for the lower electrode(112a), a ferroelectric layer(114a) and an upper electrode(116a) are deposited on a semiconductor substrate(110) where the cell array region(C) and the periphery region(P) are defined. The layers for the upper electrode(116a) and the ferroelectric layer(114a) are etched and separated by the cell. Next, the layer for the lower electrode(112a) is selectively etched in the cell array region(C) through a photoresist pattern and separated by the cell while leaving the dummy pattern(112b) in the periphery region(P).