(SR,PB)TIO3 THIN FILM FOR SUPER HIGH INTEGRATED DRAM CAPACITOR AND MANUFACTURING METHOD THEREOF

摘要

PURPOSE: A (Sr,Pb)TiO3 thin film and its manufacturing method are to obtain excellent dielectric properties and to enable annealing at a low temperature to accomplish a desired properties even at a low temperature. CONSTITUTION: A strontium(Sr) or a lead(Pb) is located at a corner of a hexahedral single crystalline matrix whereas a titanium(Ti) is located at a center thereof. An oxygen(O) atom is located at a matrix face in a (Sr, Pb)TiO3 thin film having a perovskite structure. A ratio of Pb to (Pb plus Strontium) ranges from 0.01 to 0.99 (mole per mole). At least one material selected from a group consisting of IIA, IIIB and VA group element is added as a doping material. The element is magnesium, bismuth or lanthanide. After a precursor comprising strontium, lead or TiO3 is prepared, it is deposited on a semiconductor substrate by a dry etching or wet etching under the condition of a temperature between zero to 800 deg.C and a pressure of 1x10¬-9 to 100 atmospheric pressure. Such deposited thin film is subject to annealing.