发明名称 EXPOSING METHOD FOR FORMING FINE PATTERN
摘要 PURPOSE: An exposing method for forming a fine pattern is provided to prevent the resolution from lowering due to the interference of light by arranging a slit between a light source for exposing and a mask for exposing to the direction vertical to the direction of the light. CONSTITUTION: A slit(26) is arranged between a light source(20) and a mask(26) for exposing, and a lens(27) and a wafer(28) are arranged on the lower part of the mask(26) in turns. The first light(L4) from the light source(20) is diffracted to the second light(L5) via a slit(23), the second light(L5) is diffracted to the third light(L6) via the mask(26), and the third light(L6) is diffracted to the fourth light(L7) via the lens(27), so that a photosensitive film formed on the wafer(28) is exposed by the fourth light(L7).
申请公布号 KR20010047286(A) 申请公布日期 2001.06.15
申请号 KR19990051437 申请日期 1999.11.19
申请人 HYNIX SEMICONDUCTOR INC. 发明人 LEE, SANG WON;PARK, JONG O
分类号 H01L21/027;(IPC1-7):H01L21/027 主分类号 H01L21/027
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