| 摘要 |
PURPOSE: A photolithography using a double exposure is provided to pattern the hole-pattern of high density accurately by using a double exposure in a photolithography process. CONSTITUTION: A mask is arranged to open the regions corresponding to the (1, 3, 5, ..., n-1)th or the (2, 4, 6, ..., n)th hole-patterns in the hole-regions(21) in a direction in which the distance between the hole-patterns is shorter than that of the other direction. The mask is fixed on the first position to transfer a wafer. The mask is shifted by the distance between the hole-patterns in a direction in which the distance between the hole-patterns is shorter than that of the other direction. Therefore, the mask is fixed on the second position to transfer the wafer.
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