发明名称 APPARATUS FOR ETCHING WAFER FOR MANUFACTURING SEMICONDUCTOR DEVICE
摘要 PURPOSE: An apparatus for etching a wafer for manufacturing a semiconductor device is provided to improve repeatability in an etching process, by preventing plasma density from being decreased by a conductive thin film formed on the lower surface of a dielectric window. CONSTITUTION: A conductive chamber(1) has a space part where plasma is generated. A dielectric window(2) of a quartz or ceramic material is installed in the upper portion of the conductive chamber. An antenna(3) is installed in the upper portion of the dielectric window. A wafer chuck(4) is installed in the conductive chamber. A shower head(6) having a plurality of gas apertures is installed in the lower portion of the dielectric window.
申请公布号 KR20010047611(A) 申请公布日期 2001.06.15
申请号 KR19990051912 申请日期 1999.11.22
申请人 HYNIX SEMICONDUCTOR INC. 发明人 PARK, BYEONG HO
分类号 H01L21/306;(IPC1-7):H01L21/306 主分类号 H01L21/306
代理机构 代理人
主权项
地址