SEMICONDUCTOR DEVICE

摘要

PURPOSE: A semiconductor device is provided to stabilize an operating characteristic by minimizing loss of current injection of an integrated injection logic device, and to increase fan-out regarding backward current gain of an NPN transistor. CONSTITUTION: An epi layer(11) of the second conductivity type is formed on a substrate(10) of the first conductivity type. A buried layer(13) of the second conductivity type is formed between the epi layer and the substrate of the region for an NPN transistor to reduce current loss of a PNP transistor for current injection. The first diffusion layer(15) is formed in a portion of the epi layer of the region for forming an emitter of the PNP transistor. The second diffusion layer(17) is formed in a portion of the epi layer on the buried layer of the region for forming a base of the NPN transistor. The third diffusion layer(18) of the second conductivity type is formed in the second diffusion layer of the region for forming a collector of the NPN transistor. The fourth diffusion layer(19) of the second conductivity type is deeply formed in the epi layer on the buried layer to be electrically connected to the buried layer.