| 摘要 |
PURPOSE: A redundancy circuit of a semiconductor memory device is provided to reduce power consumption by blocking the accessing of a memory cell in an auto refresh and self refresh operation. CONSTITUTION: According to the redundancy circuit, a row generator(10) generates a row active signal(row_ac) enabling a column repair operation, and a column repair generator(30) generates a column repair signal(col_rep) in response to the row active signal and an auto/self refresh signal(auto/self_ref). And, a column repair box(20) is enabled or disabled in response to the column repair signal and a column address signal(col_ad). The column repair signal performs the column repair operation by designating a repair cell by being activated in a read or write operation accessing the memory cell except the auto refresh and the self refresh operation where the auto/self repair signal is disabled and the row active signal is enabled.
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