| 摘要 |
PURPOSE: A semiconductor device is provided to improve uniformity of a gate critical dimension by forming a self-aligned T-shaped gate electrode, and to improve interfacial cohesion between a tungsten silicide electrode and a poly gate by performing an oxide process after forming the T-shaped gate electrode and the sidewall insulating layer. CONSTITUTION: A gate insulating layer and the first conductive layer are stacked on a predetermined region of a semiconductor substrate(31). The second conductive layer having a width wider than that of the first conductive layer is stacked on the first conductive layer. A sidewall insulating layer(35a) is formed on both side surfaces of the first conductive layer under the second conductive layer. The first impurity region is formed in the surface of the semiconductor substrate under the sidewall insulating layer. The second impurity region is formed in the semiconductor substrate at both sides of the first conductive layer and the sidewall insulating layer.
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