发明名称 METHOD FOR FORMING THIN FILM
摘要 PURPOSE: A method for forming a thin film is provided to be capable of forming a dielectric layer under oxygen gas atmosphere without the deterioration of device characteristics. CONSTITUTION: A ruthenium layer or an oxide ruthenium layer is formed by carrying out a CVD(Chemical Vapor Deposition) process using Ru(DMHPD)3. Preferably, the Ru(DMHPD)3 is a liquid state. When the CVD process is carried out on an object part, the liquid Ru(DMHPD)3 is vaporized. Preferably, the ruthenium layer or the oxide ruthenium layer is formed in a predetermined process chamber at the temperature of 300-600 °C. At this time, the predetermined process chamber has a predetermined pressure of 1-10 Torr.
申请公布号 KR100300289(B1) 申请公布日期 2001.06.15
申请号 KR20000001132 申请日期 2000.01.11
申请人 FUJITSU LIMITED 发明人 NAKABAYASHI MASAAKI;TAMURA TETSURO;NOSHIRO HIDEYUKI
分类号 H01L27/108;C23C14/06;C23C16/04;C23C16/18;C23C16/40;H01L21/02;H01L21/285;H01L21/768;H01L21/8242;(IPC1-7):H01L27/108 主分类号 H01L27/108
代理机构 代理人
主权项
地址
您可能感兴趣的专利