摘要 |
PURPOSE: A method for forming a thin film is provided to be capable of forming a dielectric layer under oxygen gas atmosphere without the deterioration of device characteristics. CONSTITUTION: A ruthenium layer or an oxide ruthenium layer is formed by carrying out a CVD(Chemical Vapor Deposition) process using Ru(DMHPD)3. Preferably, the Ru(DMHPD)3 is a liquid state. When the CVD process is carried out on an object part, the liquid Ru(DMHPD)3 is vaporized. Preferably, the ruthenium layer or the oxide ruthenium layer is formed in a predetermined process chamber at the temperature of 300-600 °C. At this time, the predetermined process chamber has a predetermined pressure of 1-10 Torr.
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