| 摘要 |
PURPOSE: A resist composition and a method for forming contact using the same are provided which control the flow rate of a resist pattern and form a fine contact pattern beyond the limit of an exposing device and minimize profile variation of the resist pattern. CONSTITUTION: The resist composition comprises a resist for deep ultra-violet rays such as acetal protected-polyhydroxystyrene resin, each 3-15 wt.% of free radical initiator and cross linker regarding the weight of the solid resin. The method comprises steps of: (i) forming layer insulating film on a base plate; (ii) coating the layer insulating film with the cross linker and the free radical initiator added resist for deep ultra-violet rays; (iii) patterning the coated resist to expose certain area of the layer insulating film; (iv) baking the resist pattern at a temperature of 120-170 deg.C for 90-150 seconds in one step to flow; and (v) etching the exposed part of the layer insulating film by using the flown resist pattern as a mask. |
