PROCESS WINDOW FOR ELECTROCHEMICAL DEPOSITION OF HIGH ASPECT RATIO STRUCTURES

摘要

PURPOSE: To provide a method for plating the surface of a substrate having an opening with a high aspect ratio with a metal without generating defects. CONSTITUTION: This plating method is executed in a solution containing a metal having a molar concentration of about 0.2 to 1.2 M, an inhibiting additive having a concentration of about 3.75 to 15 mL/L to the whole solution and an accelerating additive having a concentration of about 0.175 to 2.1 mL/L to the whole solution. The temperature of the plating solution is about < 30 deg.C.