METHOD FOR MANUFACTURING CAPACITOR STORAGE ELECTRODE OF SEMICONDUCTOR DEVICE

摘要

PURPOSE: A method for manufacturing a capacitor storage electrode of a semiconductor device is provided to form the storage electrode suitable for a high integrated semiconductor capacitor, by maximizing an effective area of the capacitor storage electrode, and by simplifying a process for forming the storage electrode. CONSTITUTION: A conductive material is filled in a contact in which a predetermined region of a substrate(100) is exposed between word lines, to form a pad(112). The first etch stop layer is formed in a portion except the pad. After the second insulating layer(114) is deposited on the first etch stop layer and the pad, a bit line(116) is formed. After the bit line is formed, the second etch stop layer is formed. The third insulating layer filling a curved portion between bit lines is formed on the second etch stop layer. The fourth insulating layer(124) is deposited on the third insulating layer, and etched to form a storage electrode region by a photolithography process. A conductive material is deposited on the entire substrate including the fourth insulating layer to form a storage electrode layer. The storage electrode layer deposited on the surface of the fourth insulating layer is removed, and the fourth insulating layer is exposed to separate the storage electrode.