| 摘要 |
PURPOSE: A method for manufacturing a planarization layer of a semiconductor device is provided to forming the planarization layer having no void, by depositing a planarization layer, by etching a part of the upper portion of the evaporated planarization layer to make a portion between stepped regions of the planarization layer have a gentle slope, and by depositing another planarization layer. CONSTITUTION: The first planarization layer is deposited on a substrate(1) having a semiconductor device. A part of the upper portion of the first planarization layer is etched to make a portion between stepped regions of the first planarization layer have a gentle slope. The second planarization layer is deposited on the first planarization layer of which a part of the upper portion is etched.
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