发明名称 SEMICONDUCTOR CHIP HAVING MOISTURE ABSORPTION BLOCKING LAYER IN CHIP EDGE AND METHOD FOR MANUFACTURING MOISTURE ABSORPTION BLOCKING LAYER
摘要 PURPOSE: A semiconductor chip having a moisture absorption blocking layer in a chip edge is provided to prevent moisture from penetrating through the edge of the semiconductor chip in testing reliability of the semiconductor chip, by forming the moisture absorption blocking layer in the edge of the semiconductor chip. CONSTITUTION: Predetermined devices are formed inside a semiconductor chip of which an uppermost interconnection layer is covered with a passivation layer(170). An interlayer dielectric(100) adjacent to the edge of the semiconductor chip along the circumference of the semiconductor chip is etched to a predetermined depth to form a trench(152). A moisture absorption blocking layer is filled in all of the inside of the trench or formed on the sidewall of the trench by a predetermined thickness so that moisture does not penetrate through the edge of the semiconductor chip.
申请公布号 KR20010048332(A) 申请公布日期 2001.06.15
申请号 KR19990052997 申请日期 1999.11.26
申请人 SAMSUNG ELECTRONICS CO., LTD. 发明人 BAN, HYO DONG;LEE, CHI HUN;MIN, EUN YEONG;PARK, YEONG HUN
分类号 H01L21/31;H01L21/301;H01L23/26;H01L23/31;(IPC1-7):H01L21/31 主分类号 H01L21/31
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