| 摘要 |
PURPOSE: A solar cell and its manufacturing method are provided to promote the electrical characteristic by reducing the interfacial phenomena existing between ITO layer and InP surface. CONSTITUTION: To form the solar cell, an InP substrate(21) whose predetermined upper part has MESA structure is formed to be used for p type layer. An ohmic contact layer(22) is formed under the InP substrate and used for a lower electrode. A sulfide passivation layer(23) is formed on the InP substrate. An ITO layer(24) is formed on the sulfide passivation layer to work as a reflection preventing layer with N+ layer. A top grid layer(25) is formed on the ITO layer and used for the upper electrode. |
