| 摘要 |
PURPOSE: A method for forming a contact hole of a semiconductor device is provided to allow formation of the deeper contact hole in a smaller area by increasing etch selectivity between a photoresist pattern and an oxide layer. CONSTITUTION: In the method, the oxide layer(2) is deposited on a substrate(1), and then the photoresist pattern(PR) is formed on the oxide layer(2). Here the photoresist pattern(PR) exposes a portion of the oxide layer(2). Next, impurity ion implantation is performed instead of conventional ultraviolet irradiation. Accordingly, an upper part(PR1) of the photoresist pattern(PR) is hardened, whereas an upper part(3) of the exposed portion of the oxide layer(2) is softened. Next, by using the hardened photoresist part(PR1) as an etch mask, the softened oxide part(3) and the underlying oxide layer(2) are etched to form the contact hole exposing a portion of the substrate(1).
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