| 摘要 |
PURPOSE: A method for producing a semiconductor element is provided to use a cobalt silicide with low resistance as a polycide so as to reduce the resistance of a gate electrode and to decrease the processing steps. CONSTITUTION: A method for producing a semiconductor element consists of the process; forming an oxide layer(32) and a polysilicon layer(33) on a semiconductor substrate(31) in order; forming a photoregist(34) pattern until one area of the polysilicon layer(33) appears; depositing a cobalt(35) on the whole surface; removing the cobalt silicide(35) and forming a cobalt silicide by annealing; and etching the polysilicon layer(33) by using the cobalt silicide(35) as the mask so as to form a gate electrode.
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