发明名称 |
METHOD FOR MANUFACTURING METAL INTERCONNECTION |
摘要 |
PURPOSE: A method for manufacturing a metal interconnection is provided to extend the lifetime of the metal interconnection, by forming a metal nitride deposition layer inside a metal interconnection layer so that a void as a main cause of an electromigration defect is prevented from being transformed from a circular type to a slit type and the void is prevented from growing. CONSTITUTION: A metal alloy layer(12) is deposited on an insulating layer(11). Nitrogen ions are implanted into the entire surface of the metal alloy layer, and annealed to form a metal nitride deposition layer(13) inside the metal alloy layer. The metal alloy layer and the metal nitride deposition layer are etched to form a metal interconnection layer, which has the metal nitride deposition layer inside the metal alloy layer.
|
申请公布号 |
KR20010046509(A) |
申请公布日期 |
2001.06.15 |
申请号 |
KR19990050304 |
申请日期 |
1999.11.12 |
申请人 |
HYNIX SEMICONDUCTOR INC. |
发明人 |
KANG, CHANG YONG;KIM, YEONG CHEOL |
分类号 |
H01L21/3205;(IPC1-7):H01L21/320 |
主分类号 |
H01L21/3205 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|