发明名称 METHOD FOR MANUFACTURING METAL INTERCONNECTION
摘要 PURPOSE: A method for manufacturing a metal interconnection is provided to extend the lifetime of the metal interconnection, by forming a metal nitride deposition layer inside a metal interconnection layer so that a void as a main cause of an electromigration defect is prevented from being transformed from a circular type to a slit type and the void is prevented from growing. CONSTITUTION: A metal alloy layer(12) is deposited on an insulating layer(11). Nitrogen ions are implanted into the entire surface of the metal alloy layer, and annealed to form a metal nitride deposition layer(13) inside the metal alloy layer. The metal alloy layer and the metal nitride deposition layer are etched to form a metal interconnection layer, which has the metal nitride deposition layer inside the metal alloy layer.
申请公布号 KR20010046509(A) 申请公布日期 2001.06.15
申请号 KR19990050304 申请日期 1999.11.12
申请人 HYNIX SEMICONDUCTOR INC. 发明人 KANG, CHANG YONG;KIM, YEONG CHEOL
分类号 H01L21/3205;(IPC1-7):H01L21/320 主分类号 H01L21/3205
代理机构 代理人
主权项
地址