| 摘要 |
PURPOSE: A cylindrical semiconductor capacitor is provided which starts by taking an oxide layer which is formed over a semiconductor substrate and simultaneously removing a cylindrical volume and a toroidal volume around the cylindrical volume. CONSTITUTION: The removed cylindrical and toroidal volumes are filled with a copper/tantalum nitride conductor to form a metal cylinder(18) and ring(20). An oxide ring between the conductive cylinder(18) and ring(20) is removed. A high dielectric constant material is formed to replace the oxide ring between the metal cylinder and ring to form a cylindrical capacitor. Additional oxide material is deposited, patterned, and filled with copper/tantalum nitride conductor to make the first connection(34) to the metal ring, and a further dielectric is deposited, patterned, and filled with additional copper/tantalum nitride conductor to form the second connection(40) to the metal cylinder.
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