| 摘要 |
PURPOSE: A semiconductor device is provided to prevent films of lower electrodes from being stripped in a densifying heat treatment process of the lower electrodes and a crystallizing heat treatment process of dielectrics. CONSTITUTION: An adhesive layer(16) having an insulator is formed between lower electrodes and the inner walls of holes recessed into an SiO2 insulating layer, an SiO2 layer(14) overlies an Si substrate(11), Si plugs(12) and a barrier layer(13) are formed therein, an adhesive layer(16) is formed on the inner walls of holes of the SiO2 insulating layer(15), Ru-made lower electrodes(17) are formed on the barrier layer(13) and the adhesive layer(16), and a BST dielectric film(18) and Ru-made upper electrodes(19) are laminated one above another on the lower electrodes(17), thereby constituting dielectric elements with these and the lower electrodes(17).
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