SILICON-GERMANIUM BICMOS ON SOI AND METHOD OF MANUFACTURING THE SAME

摘要

PURPOSE: A SiGe HBT(Heterojunction Bipolar Transistor) is provided to easily isolate an SOI(Silicon On Insulator) region by selective implanting of oxygen atoms into a buried oxide layer. CONSTITUTION: A BICMOS integrated circuit is formed on an SOI substrate. A silicon layer has a standard thickness of 0.1 mum to 0.2 mum and with Bipolar SiGe transistors formed in an epitaxial layer nominally 0.5 mum thick. The CMOS transistors are formed with standard processing, then covered with an insulating film. The insulating film is stripped in the bipolar areas and an epitaxial SiGe layer is deposited on the Si substrate. The bipolar transistors are formed using the SiGe epi layer for the base and having an encapsulated structure for device isolation using shallow isolation trenches and the buried oxide.