PATTERN FOR SIMULTANEOUSLY MEASURING HOLE CRITICAL DIMENSION HOLE AND SHOT SCALE

摘要

PURPOSE: A pattern for simultaneously measuring a hole critical dimension hole and a shot scale is provided to reduce manufacturing cost, by using only a critical dimension scanning electronic microscope(SEM) apparatus to measure the hole critical dimension and the shot scale caused by an interval between line patterns facing each other. CONSTITUTION: A plurality of hole patterns are formed in a region where respective shots formed on a wafer are overlapped to measure a hole critical dimension. A plurality of line patterns facing each other are formed in X-axis and Y-axis directions in a region where the respective shots formed on the wafer are overlapped, to measure a shot scale.