FIELD EFFECT TRANSISTOR AND MANUFACTURING METHOD THEREOF

摘要

PURPOSE: A method for manufacturing a field effect transistor is provided to efficiently radiate a lot of quantity of heat generated in a channel layer, and to reduce parasitic inductance by a bonding wire. CONSTITUTION: A channel layer is formed on a semiconductor substrate. A source electrode, a drain electrode and a gate electrode are formed on the channel layer. An insulating layer is formed on the channel layer, the source electrode, the drain electrode and the gate electrode. A bump composed of a conductive material is formed on the source electrode so that a part of the bump is buried in the insulating layer and the rest of the bump is protruded from the insulating layer.