VARIABLE CAPACITANCE DIODE AND ITS MANUFACTURING METHOD

摘要

PURPOSE: A variable capacitance diode and its manufacturing method are provided to prevent from a power leakage caused by the lattice defect on the surface of the silicon substrate. CONSTITUTION: The variable capacitance diode includes n+ type silicon substrate(20). N type epi-layer(12) is formed on the substrate to have the same conductivity. N- cathode region(14) is formed on a predetermined part of the epi-layer to have a deep junction. P- anode region(16) is formed shallowly on a predetermined part of the epi-layer to PN-junction with the N- cathode region. Anode electrode(20) is formed to have the polysilicon(20a)/Al(20b) structure to thereby junction with the P- anode region.