| 摘要 |
PURPOSE: A method for forming a metal contact of a semiconductor device is provided to allow a reduction in contact resistance. CONSTITUTION: In the method, a planarized insulating layer(11) is formed on a silicon substrate(10) and selectively etched to form a contact hole exposing a junction region formed in the substrate(10). Next, a tungsten layer(12) is selectively deposited on a surface of the junction region by reacting a tungsten hexafluoride gas(WF6) with silicon in the junction region. Also, the tungsten layer(12) laterally encroaches on the junction region along an interface between the insulating layer(11) and the substrate(10), thereby increasing contact area and thus reducing contact resistance. The contact hole is then filled with a metal layer for interconnection.
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