| 摘要 |
PURPOSE: An ion implantation device is to control more foreign matters by controlling the foreign matters in a hardware mode and to simultaneously accomplish an X axis and a Y axis focusing of the ion beam. CONSTITUTION: An ion beam is generated from an arc chamber(1) which is a source head. An extraction voltage is applied to an extraction slit(2) arranged next to the ion chamber. An ion analyzer(3) placed next to the extraction slit extracts only the required beams. The ion beam is accelerated by an ion beam accelerator(6). A vertical cylindrical rotating slit module(5a) and a horizontal cylindrical rotating slit module(5b) of the same constitution with different location direction are successively provided between the ion analyzer and the ion beam accelerator. The vertical slit module filters any foreign matters while being rotated in a direction opposite to a moving path of the ion beam and accomplishes an X axis focusing of the ion beam. The horizontal slit module accomplishes a Y axis focusing of the ion beam as well as the X axis focusing thereof. The vertical and horizontal modules comprise a rotating plate(500a,500b) and a cylindrical rotating slit(501a,501b).
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