| 摘要 |
PURPOSE: A method for isolating a cell is provided to form a hole smaller than the hole defined in a photolithography process, by forming an insulating pillar of a sidewall-type nitride layer inside a contact hole. CONSTITUTION: A gate line(202) is formed on a semiconductor substrate(200). An interlayer dielectric has a contact hole exposing a gap between the gate lines, covering the gate line. A nitride layer is formed on the interlayer dielectric to cover the contact hole. The nitride layer is etched back until the interlayer dielectric is exposed. The interlayer dielectric is etched to form an insulating pillar(216).
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