| 摘要 |
PURPOSE: A method for simultaneously forming a bit line and a bit line contact is provided to decrease the number of manufacturing steps and to improve yield, by depositing an insulating layer on the entire substrate after a contact pad is formed between gate electrodes, by etching the insulating layer to form a contact hole, and by filling the contact hole with a metal layer. CONSTITUTION: An active region and an inactive region are defined in a semiconductor substrate(110). A contact pad(118) is formed in the active region between gate electrodes(114), and the first insulating layer(116) is deposited on the inactive region. The second insulating layer(120) is deposited on the semiconductor substrate. A silicon nitride layer(122) is deposited on the second insulating layer. The silicon nitride layer on a region of the contact pad is patterned. The third insulating layer is deposited on the entire surface of the substrate. The third and second insulating layers are etched by a photolithography process until a region of the contact pad is exposed, to form a contact hole penetrating the silicon nitride layer pattern. A metal layer(130) is filled in the contact hole.
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