| 摘要 |
PURPOSE: A method for forming a contact of a semiconductor device is provided to increase a filling rate of a tungsten layer in a contact hole. CONSTITUTION: In the method, a conductive layer(22) is formed on a semiconductor substrate(21), and an insulating layer(23) is formed thereon. The insulating layer(23) is then selectively etched to form the contact hole exposing a portion of the conductive layer(22), and a metal barrier(24) is formed on a resultant structure. Next, an upper part of the metal barrier(24) is treated with plasma by using a specific gas, and thereby turned into a plasma-treated layer(25). The specific gas is capable of suppressing growth of tungsten. Thereafter, the tungsten layer(26) is formed over a resultant structure and etched back to expose the plasma-treated layer(25) and thus to form the tungsten contact. After that, a metal interconnection line(27) is formed thereon.
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