| 摘要 |
PURPOSE: A field emission element and manufacturing method of the same are provided to minimize voltage signal distortion due to a gate electrode resistance by forming a bus-line gate electrode on a gate insulating layer in a bus-line area. CONSTITUTION: A field emission element comprises a cathode electrode(42), a gate insulating layer and a gate electrode, a microtip(48 and a bus line gate electrode(45). The cathode electrode(42) is formed in the upper of a grass substrate(40). The gate insulating layer and the gate electrode are subsequently formed so that a gate hole is patterned in the upper of the cathode electrode(42). The microtip(48) is formed in the gate hole. The bus line gate electrode(45) is formed in the upper of the gate insulating layer formed in a bus line pattern region. Therefore, the field emission element can easily control a voltage signal introduced in the gate electrode.
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