| 摘要 |
PURPOSE: A method for manufacturing a polysilicon plug is provided to prevent a short circuit generated between the adjacent polysilicon plugs by a void, by forming a seed layer by pre-deposition of polysilicon, and by forming a void cover layer through a control of deposition pressure to cover the surface of the void. CONSTITUTION: An insulating layer and a boron-phosphorous-silicate-glass(BPSG) layer are deposited on a semiconductor substrate where a gate word line is patterned to be separated from each other, and planarized. The BPSG layer and the insulating layer formed on the separation region of the gate word line are etched to form a contact hole. A seed layer(11) is formed on the resultant structure having the contact hole by controlling deposition pressure of polysilicon. A void cover layer(12) where the size of the grain is enlarged, is formed by increasing the deposition pressure. Polysilicon is mainly deposited on the resultant structure having the void cover layer, and planarized to form a polysilicon plug.
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